APPARATUS AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

• Main Authors: HARA KAZUTO, TOKUDA YUICHIRO
• Format: Patent
• Language: English
• Published: 05.07.2012
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To produce a SiC single crystal having a higher quality by suppressing the adhesion of polycrystals to a SiC single crystal.SOLUTION: An apparatus for producing a silicon carbide single crystal is provided in which a base 9 has such a structure that a purge gas is supplied from the rear side of a seed crystal 5 and the purge gas is allowed to flow toward the outer edge of the seed crystal 5. By virtue of such a structure, the formation of polycrystals at a part located in the periphery of the seed crystal 5 in the base 9 is restrained by the effect of the purge gas. Thereby, even if a long SiC single crystal 20 is grown, the adhesion of the polycrystals on the outer edge part of the SiC single crystal 20 caused by the rising of the polycrystals is prevented. Consequently, it becomes possible to grow the SiC single crystal 20 without deteriorating the quality of the outer edge part.