SEMICONDUCTOR DEVICE

• Main Authors: YOSHIHISA YASUKI, NITTA TETSUYA
• Format: Patent
• Language: English
• Published: 28.06.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device that has high prevention effect of movement of electrons from a formation region of an output transistor to a formation region of other elements and is capable of preventing malfunction of the elements.SOLUTION: A semiconductor device comprises a semiconductor substrate SUB, a pair of elements DR from which electrons are emitted, active barrier structures AB, and p-type ground regions PGD. The semiconductor substrate SUB has a primary surface and has p-type regions in its inside. The pair of elements DR are formed on the primary surface above the p-type regions. The active barrier structures AB are disposed in the region sandwiched between the pair of elements DR on the primary surface. The p-type ground regions PGD are formed closer to an end side of the primary surface than to the pair of elements DR and the active barrier structures AB so as to keep away from the region sandwiched by the pair of elements DR on the primary surface, and are the regions to which ground potential can be applied and are electrically connected to the p-type regions. The p-type ground regions PGD are divided by the region adjacent to the region sandwiched between the pair of elements DR.