SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

• Main Authors: HIKOSAKA TOSHITERU, MORIOKA TOMOKO, OKA TOSHIYUKI, ONO HIROSHI, NUNOUE SHINYA
• Format: Patent
• Language: English
• Published: 28.06.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with high crystal quality and high light-extraction efficiency and to provide a method of manufacturing the same.SOLUTION: A semiconductor light-emitting element comprises a first semiconductor layer including an n-type semiconductor layer, a second semiconductor layer including a p-type semiconductor layer, and a light-emitting portion provided between the first semiconductor layer and the second semiconductor layer. The light-emitting portion includes a plurality of barrier layers, and well layers provided between the plurality of barrier layers. The first semiconductor layer has first irregularities and second irregularities. The first irregularities are provided on a primary surface of the first semiconductor layer at the opposite side on which the light-emitting portion is provided. The second irregularities are provided on the bottom surfaces and the top surfaces of the first irregularities. The second irregularities have a smaller step than the step between the bottom surfaces and the top surfaces.