SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To ensure the insulation properties between a semiconductor layer and a through electrode even if a through-hole insulating layer retracts from a surface of the semiconductor layer.SOLUTION: A through electrode 9 is buried in a through hole 6 via through-hole insulating layers...

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Bibliographic Details
Main Author KOMUKAI TOSHIAKI
Format Patent
LanguageEnglish
Published 21.06.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To ensure the insulation properties between a semiconductor layer and a through electrode even if a through-hole insulating layer retracts from a surface of the semiconductor layer.SOLUTION: A through electrode 9 is buried in a through hole 6 via through-hole insulating layers 7 and 8. The through-hole insulating layers 7 and 8 are formed so as to retract from a surface of a semiconductor layer 3. A recess 10 corresponding to the retraction portion of the through-hole insulating layers 7 and 8 is formed between the semiconductor layer 3 and the through electrode 9. A side-wall insulating film 12 buried in the recess 10 is formed on the side walls of the through electrode 9.
Bibliography:Application Number: JP20100265371