WAFER LEVEL UNDERFILL COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

• Main Authors: SUZUKI OSAMU, SONE YUMI, HOCCHI TOYOKAZU, IZAWA YUKI, IMAI KAZUNARI
• Format: Patent
• Language: English
• Published: 21.06.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

PROBLEM TO BE SOLVED: To provide: a wafer level underfill composition, low in a tack value at a stage where temperature is returned to normal temperature after the wafer level underfill composition is brought into a B stage, low in melt viscosity in a temperature region in reflow, and excellent in transparency after the wafer level underfill composition is brought into a B stage; and a method for manufacturing a semiconductor device using the wafer level underfill composition.SOLUTION: The wafer level underfill composition includes: a crystalline epoxy resin (A); a crystalline phenol resin (B); an organic acid (C); a curing catalyst (D); and a solvent (E). The crystalline epoxy resin (A) contains a resin having a naphthalene skeleton.