ABRASIVE PAD FOR CHEMICAL MECHANICAL PLANARIZATION

• Main Authors: JOSEPH K SO, DAVID SNYDER, PETER A BARK, VISHWANATHAN ARUN, LEE MELBOURNE COOK, JOHN VH ROBERTS, DAVID B JAMES
• Format: Patent
• Language: English
• Published: 14.06.2012
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TOOLS FOR GRINDING, BUFFING, OR SHARPENING; TRANSPORTING

PROBLEM TO BE SOLVED: To provide an abrasive pad having low elastic recovery and exhibiting significant inelasticity.SOLUTION: An abrasive pad and a polishing method are used for polishing the surface of a semiconductor device or a precursor, and for planarizing a metal damascene structure on a semiconductor wafer. The polishing layer of the pad has a hardness of 40-70 Shore D, tensile elasticity of 100-2,000 MPa at 40°C, and the ratio of E' of 1-5 at 30-90°C. When the pad is immersed in deionized water for 24 hours at ambient temperature of about 25°C, each linear dimension of the pad changes about 1% or less, and hardness of the pad reduces about 30% or less.