QUANTUM-DOT INFRARED DETECTOR AND INFRARED IMAGE SENSOR

PROBLEM TO BE SOLVED: To provide a quantum-dot infrared detector having an increased sensitivity and an infrared image sensor.SOLUTION: The quantum-dot infrared detector comprises: quantum dots; a first barrier layer that covers the quantum dots and that has an energy gap broader than that of the qu...

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Bibliographic Details
Main Authors SAITO TETSUO, KOYAMA MASATOSHI, NISHINO HIROSHI, KIBE MICHIYA, SUZUKI RYO, SUGIZAKI GORO
Format Patent
LanguageEnglish
Published 07.06.2012
Subjects
BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
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Summary:PROBLEM TO BE SOLVED: To provide a quantum-dot infrared detector having an increased sensitivity and an infrared image sensor.SOLUTION: The quantum-dot infrared detector comprises: quantum dots; a first barrier layer that covers the quantum dots and that has an energy gap broader than that of the quantum dots; an intermediate layer that is provided above the first barrier layer and below the quantum dots, and that has an energy gap broader than that of the quantum dots and narrower than that of the first barrier; a photoelectric conversion layer that is provided in the first barrier layer and that has an energy gap broader than that of the quantum dots and narrower than that of the first barrier; and electrode layers provided on two sides of the photoelectric conversion layer.
Bibliography:Application Number: JP20100257853