METAL COMPOUND AND RAW MATERIAL FOR FORMING THIN FILM

• Main Authors: SAKURAI ATSUSHI, SHIMIZU MASAKO, WADA SENJI, SHIRATORI TSUBASA, SAITO AKIO, YOSHINO TOMOHARU
• Format: Patent
• Language: English
• Published: 22.03.2012
• Subjects: ACYCLIC OR CARBOCYCLIC COMPOUNDS; ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a titanium precursor which excels in reactivity with a reactant suitable for a CVD method, an ALD method or the like, especially with an oxidant, and in which the improvement in film formation speed and the low-temperature thin film become possible.SOLUTION: The metal compound is expressed by general formula (1). In the formula, Rdenotes a hydrogen atom or a methyl group, Rdenotes a methyl group or an ethyl group, and Rdenotes a methyl group or an ethyl group.