MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for reducing an etching residue of a high-k film containing rare earth metals.SOLUTION: A manufacturing method of a semiconductor device has steps of: forming an insulation film 4 on a semiconductor substrate 1; formin...

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Bibliographic Details
Main Author KASE YUKA
Format Patent
LanguageEnglish
Published 23.02.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for reducing an etching residue of a high-k film containing rare earth metals.SOLUTION: A manufacturing method of a semiconductor device has steps of: forming an insulation film 4 on a semiconductor substrate 1; forming oxide films 7 and 12 containing rare earth elements on the insulation film 4; and etching the oxide films 7 and 12 containing rare earth elements with a chemical solution containing hydrofluoric acid, hydrochloric acid, and sulfuric acid. By this manufacturing method, the oxide films 7 and 12 containing rare earth elements are excellently etched.
Bibliography:Application Number: JP20100175626