FERROELECTRIC MEMORY

PROBLEM TO BE SOLVED: To provide a ferroelectric memory with which an increase in a chip surface area can be suppressed and, at the same time, a signal amount of a memory cell can be grasped in a short time.SOLUTION: A ferroelectric memory according to the present invention has memory cell blocks MB...

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Main Authors DOMAE SUMIKO, TAKASHIMA DAIZABURO
Format Patent
LanguageEnglish
Published 23.02.2012
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Abstract PROBLEM TO BE SOLVED: To provide a ferroelectric memory with which an increase in a chip surface area can be suppressed and, at the same time, a signal amount of a memory cell can be grasped in a short time.SOLUTION: A ferroelectric memory according to the present invention has memory cell blocks MB0 to MB7 having ferroelectric capacitors, a first bit line group /BL0-/BL3 and a second bit line group BL0-BL3 from which data of MB0 to MB7 are read out, and a reference potential generation circuit 11 for generating reference potential by shorting BL0-L3 based on a control signal B every time the data from MB0 to MB3 are read out to /BL0-/BL3.
AbstractList PROBLEM TO BE SOLVED: To provide a ferroelectric memory with which an increase in a chip surface area can be suppressed and, at the same time, a signal amount of a memory cell can be grasped in a short time.SOLUTION: A ferroelectric memory according to the present invention has memory cell blocks MB0 to MB7 having ferroelectric capacitors, a first bit line group /BL0-/BL3 and a second bit line group BL0-BL3 from which data of MB0 to MB7 are read out, and a reference potential generation circuit 11 for generating reference potential by shorting BL0-L3 based on a control signal B every time the data from MB0 to MB3 are read out to /BL0-/BL3.
Author DOMAE SUMIKO
TAKASHIMA DAIZABURO
Author_xml – fullname: DOMAE SUMIKO
– fullname: TAKASHIMA DAIZABURO
BookMark eNrjYmDJy89L5WQQcXMNCvJ39XF1DgnydFbwdfX1D4rkYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBoZGBsYWxpamjsZEKQIAjTwg8Q
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID JP2012038395A
GroupedDBID EVB
ID FETCH-epo_espacenet_JP2012038395A3
IEDL.DBID EVB
IngestDate Fri Jul 19 15:53:24 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_JP2012038395A3
Notes Application Number: JP20100179834
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120223&DB=EPODOC&CC=JP&NR=2012038395A
ParticipantIDs epo_espacenet_JP2012038395A
PublicationCentury 2000
PublicationDate 20120223
PublicationDateYYYYMMDD 2012-02-23
PublicationDate_xml – month: 02
  year: 2012
  text: 20120223
  day: 23
PublicationDecade 2010
PublicationYear 2012
RelatedCompanies TOSHIBA CORP
RelatedCompanies_xml – name: TOSHIBA CORP
Score 2.8409197
Snippet PROBLEM TO BE SOLVED: To provide a ferroelectric memory with which an increase in a chip surface area can be suppressed and, at the same time, a signal amount...
SourceID epo
SourceType Open Access Repository
SubjectTerms INFORMATION STORAGE
PHYSICS
STATIC STORES
Title FERROELECTRIC MEMORY
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120223&DB=EPODOC&locale=&CC=JP&NR=2012038395A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT4MwEL_M-fmmzEWdmsUY3ohsFCgPxLhSMokMQtDMp4VSSIzJXATjv2-pTPe0x16T60fy692vvbsC3GZcOgpYM5Bta8jCjpYhW9fMEebZuMwKizdEMZxZ02cUzM15B97XuTCyTui3LI4oEJULvNfyvF79X2J5MrayumNvQvRx76eup7bseCSo_NhQvYlL48iLiEqIG8TqLPntE2zMMR92YFf40XYDB_oyadJSVps2xT-GvVioW9Yn0CmWChyS9ddrChyE7Yu3AvsyRDOvhLCFYdWDnk-TJKJPlKTJIxmGNIyS11O48WlKppoYaPG3rEUQb0zK6ENX8P3iDIYWN3JUOlmJSwdxpmPETMzsDDFeFDrTz2GwRdHF1t4BHDUtmZNtXEK3_vwqroRVrdm13I0fiQp3jg
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5qfdSbpopaH0Ukt2DabJLNIYjdbEhrXoQo9RSyTQIi1GIj_n03a6s99ToDsw_4dubbnZkFuMsLEShgRUOmqSADW0qOTFXRB7jIh1VeGkVDFIPQ8J7RZKpPW_C-roURfUK_RXNEjqgZx3stzuvF_yWWI3Irl_fsjYs-HtzUduQVOx5wKj_UZGdk0zhyIiITYk9iOUx-dZyNWfrjDuzyGNts4EBfRk1ZymLTp7hHsBdzc_P6GFrlXIIOWX-9JsFBsHrxlmBfpGjOlly4guGyC12XJklEfUrSZEz6AQ2i5PUEbl2aEk_hA2V_y8om8caktFNoc75fnkHfKLQZqqy8wpWFCqZixHTMzByxoixVpp5Db4uhi63aG-h4aeBn_jh86sFhoxH12doltOvPr_KKe9iaXYud-QFPSHqB
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=FERROELECTRIC+MEMORY&rft.inventor=DOMAE+SUMIKO&rft.inventor=TAKASHIMA+DAIZABURO&rft.date=2012-02-23&rft.externalDBID=A&rft.externalDocID=JP2012038395A