FERROELECTRIC MEMORY
PROBLEM TO BE SOLVED: To provide a ferroelectric memory with which an increase in a chip surface area can be suppressed and, at the same time, a signal amount of a memory cell can be grasped in a short time.SOLUTION: A ferroelectric memory according to the present invention has memory cell blocks MB...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
23.02.2012
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To provide a ferroelectric memory with which an increase in a chip surface area can be suppressed and, at the same time, a signal amount of a memory cell can be grasped in a short time.SOLUTION: A ferroelectric memory according to the present invention has memory cell blocks MB0 to MB7 having ferroelectric capacitors, a first bit line group /BL0-/BL3 and a second bit line group BL0-BL3 from which data of MB0 to MB7 are read out, and a reference potential generation circuit 11 for generating reference potential by shorting BL0-L3 based on a control signal B every time the data from MB0 to MB3 are read out to /BL0-/BL3. |
---|---|
Bibliography: | Application Number: JP20100179834 |