MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which is capable of improving reliability.SOLUTION: The present invention relates to a manufacturing method of a semiconductor device that has a process of applying oxygen plasma treatment with a power density of 0.2-...

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Bibliographic Details
Main Author NISHI SHINKO
Format Patent
LanguageEnglish
Published 16.02.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which is capable of improving reliability.SOLUTION: The present invention relates to a manufacturing method of a semiconductor device that has a process of applying oxygen plasma treatment with a power density of 0.2-0.3 W/cmto a surface of a nitride semiconductor layer 11. According to the present invention, a conductive layer 26 is formed on the nitride semiconductor layer 11 by oxygen plasma treatment and therefore an ion migration phenomenon is suppressed. Thus, the reliability of the semiconductor device is improved.
Bibliography:Application Number: JP20100171700