CPP-GMR ELEMENT, TMR ELEMENT AND MAGNETIC RECORDING REPRODUCTION APPARATUS

PROBLEM TO BE SOLVED: To solve the problem with disordered-phase MnIrfilm and ordered-phase MnIrfilm which currently are the industry standard as antiferromagnetic film in which, since the crystalline structure of the both film is a cubic crystal, their crystalline magnetic anisotropic energy consta...

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Bibliographic Details
Main Author SOEYA SUSUMU
Format Patent
LanguageEnglish
Published 16.02.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To solve the problem with disordered-phase MnIrfilm and ordered-phase MnIrfilm which currently are the industry standard as antiferromagnetic film in which, since the crystalline structure of the both film is a cubic crystal, their crystalline magnetic anisotropic energy constant is small, on the order of 10erg/cm, making resistance to thermal fluctuations insufficient, so that what is known as pin degradation has come to light.SOLUTION: To solve the problem, L1MnIrfilm which has a crystalline magnetic anisotropic energy constant of approximately 2×10erg/cmis applied as antiferromagnetic film 300 for use in a fixation layer. This ensures that, even for an element in size of 5 nm square and antiferromagnetic film in thickness of 5 nm, a relaxation time of 1.2×10years and resistance to thermal fluctuations of an astronomical value will be secured. As for low temperature regulating means of L1MnIrgroup antiferromagnetic film, a dynamic stress and static stress drive MnIr low temperature regulating layer is provided beneath the MnIrfilm to achieve the objective.
Bibliography:Application Number: JP20080281596