QUANTUM DOT TYPE INFRARED RAY DETECTION ELEMENT, AND QUANTUM DOT TYPE INFRARED RAY IMAGING APPARATUS

PROBLEM TO BE SOLVED: To provide a quantum dot type infrared ray detection element and a quantum dot type infrared ray imaging apparatus to increase a photocurrent under a restriction of the number of quantum dot layers.SOLUTION: Spacer layers are provided between a quantum dot lamination structure...

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Main Authors KOYAMA MASATOSHI, NISHINO HIROSHI, KIBE MICHIYA, UCHIYAMA YASUHITO, NAGASHIMA MITSUHIRO, YAMASHITA HIROYASU, TOSHIDA MINORU
Format Patent
LanguageEnglish
Published 26.01.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a quantum dot type infrared ray detection element and a quantum dot type infrared ray imaging apparatus to increase a photocurrent under a restriction of the number of quantum dot layers.SOLUTION: Spacer layers are provided between a quantum dot lamination structure and upper and lower electrode formation layers respectively. In the quantum dot lamination structure, a plurality of lamination structures consisting of a quantum dot layer, which consists of a plurality of quantum dots, and an interlayer, which sandwiches the quantum dot layer and has a bandgap wider than that of the quantum dot, are laminated.
Bibliography:Application Number: JP20100155819