SPUTTERING TARGET

• Main Authors: URAYAMA KOTARO, KONDO YUICHI
• Format: Patent
• Language: English
• Published: 26.01.2012
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To suppress the occurrence of particles of a sputtering target in a magnetron sputtering apparatus.SOLUTION: In an AZO-based or GZO-based oxide target obtained by adding 0.1-3.0 wt.% of AlOor 0.5-6.0 wt.% of GaOto ZnO and used in magnetron sputtering, the surface 10a is configured to have an erosion area 20 which has a surface roughness Ra of ≤1.0 μm and is to be sputtered and a non-erosion area 21 which is not to be sputtered. The non-erosion area 21 is configured to have a first non-erosion area 21a which is separated from the erosion area 20 and has a surface roughness Ra of 3.0-6.0 μm and a second non-erosion area 21b which is an area between the first non-erosion area 21a and the erosion area 20, has a surface roughness Ra of ≤1.0 μm, and is provided in the periphery of the erosion area 20 with a width of 5-15 mm.