METHOD FOR DRIVING MEMORY ELEMENT AND MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a method for driving memory element with which electric destruction can be suppressed.SOLUTION: In a method for driving a memory element with a plurality of magnetic layers with which recording is performed by using spin torque magnetization inversion, pulse voltage...

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Bibliographic Details
Main Authors HOSOMI MASAKATSU, HIGO YUTAKA, YAMANE ICHIYO, BESSHO KAZUHIRO, OMORI HIROYUKI, UCHIDA HIROYUKI
Format Patent
LanguageEnglish
Published 05.01.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide a method for driving memory element with which electric destruction can be suppressed.SOLUTION: In a method for driving a memory element with a plurality of magnetic layers with which recording is performed by using spin torque magnetization inversion, pulse voltage with reversed polarity is applied at the time in which voltage is applied to a memory element. The pulse voltage with reversed polarity is undershoot at the time of fall of the recording pulse. The absolute value and the pulse width of the undershoot is more than 5% and less than 20% with respect to those of the recording pulse voltage.
Bibliography:Application Number: JP20100139371