SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: CHEN ZI CHAN, ARAI SHINTARO, NAKAMURA HIROKI, SHEN NANSHENG, VLADIMIR BLIZNETSOV, KUDO TOMOHIKO, NAWAB SINGH, KABISA DEVI BUDDHARAJU, CHUI KIM JIN, SHAN LEE, MASUOKA FUJIO, JAN YU, ISO LEE
• Format: Patent
• Language: English
• Published: 22.12.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent characteristics and achieving microfabrication, and to provide a method of manufacturing the same.SOLUTION: The semiconductor device comprises: a columnar silicon layer 208 on a planar silicon layer 212; a first ntype silicon layer 113 formed in a bottom region of the columnar silicon layer 208; a second ntype silicon layer 144 formed in a upper region of the columnar silicon layer 208; a gate insulating film 140 formed around a channel region between the first ntype silicon layer 113 and the second ntype silicon layer 144; a gate electrode 210 that is formed around the gate insulating film 140 and includes a first metal-silicon compound layer 159a; an insulating film 129a formed between the gate electrode 210 and the planar silicon layer 212; an insulating film sidewall 223 formed on an upper sidewall of the columnar silicon layer 208; a second metal-silicon compound layer 160 formed in the planar silicon layer 212; and a contact 216 formed on the second ntype silicon layer 144.