METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• Main Authors: YAMAGAMI YUYA, WATANABE KENTARO, MARUTSUKI GIICHI
• Format: Patent
• Language: English
• Published: 22.12.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a simple method of manufacturing a semiconductor light-emitting element with excellent mass productivity by reducing warpage of a semiconductor layer and a plating substrate.SOLUTION: A method of manufacturing a semiconductor light-emitting element comprises the steps of: forming a nitride semiconductor layer 10 on a growth substrate 30; coating a p-side surface that is a top surface of the nitride semiconductor layer 10 with a p-electrode layer 4 and a p-protective layer 7; forming a seed layer 9 on the p-electrode layer 4 and the p-protective layer 7; forming an insulating layer 20 in a part on boundary lines between the elements on a top surface of the seed layer 9; forming a plated layer on the seed layer 9; forming clearances 40 in a part of the plated layer on the boundary lines between the element by removing the insulating layer 20 to form a plated substrate 8; removing the growth substrate 30; forming groves 35 on an n-side surface of the nitride semiconductor layer 10 that appears by removing the growth layer 30, along the boundary lines between elements; forming n-side electrodes 5; and cutting the plated substrate 8 along the boundary lines between the elements.