RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMING METHOD

• Main Authors: WATANABE TAKESHI, HARADA YUJI, SUGA YUKI, MORISAWA TAKUMI
• Format: Patent
• Language: English
• Published: 22.12.2011
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS

PROBLEM TO BE SOLVED: To provide a resist protective film material for immersion lithography which is excellent in water repellency and water sliding property, hardly causes defects in development and provides a good shape of resist pattern after development, and to provide a pattern forming method using the material.SOLUTION: A resist protective film material comprises a polymeric compound which contains at least a (meta)acrylate unit having a hexafluorohydroxypropyl group in a side chain, a (meta)acrylate unit having a group that contains fluorine-containing cyclic ether structure in a side chain and a vinyl monomer unit having a sulfonic acid group in a side chain, and which has a weight average molecular weight within a range of 1,000-500,000.