POWER CONVERSION DEVICE, CONTROL TYPE SEMICONDUCTOR ELEMENT OF DISCRETE TYPE, AND CONTROL TYPE SEMICONDUCTOR ELEMENT MODULE
PROBLEM TO BE SOLVED: To reduce radiation noise generated from a gate driving cable due to noise current induced by switching operation of an IGBT.SOLUTION: A common-mode reactor 11 is inserted onto a signal line m1 that connects between a gate terminal of an IGBT and a gate driving circuit 57, and...
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Main Author | |
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Format | Patent |
Language | English |
Published |
01.12.2011
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To reduce radiation noise generated from a gate driving cable due to noise current induced by switching operation of an IGBT.SOLUTION: A common-mode reactor 11 is inserted onto a signal line m1 that connects between a gate terminal of an IGBT and a gate driving circuit 57, and a signal line m2 that connects between an emitter terminal and the gate driving circuit 57, which constitutes of a gate driving cable 56, and the common-mode reactor 11 is disposed near the IGBT. Although a noise current induced by a switching operation of the IGBT flows into the gate driving cable 56, the noise current flowing into the gate driving cable 56 can be reduced because the current is reduced by the common-mode reactor 11 provided near the IGBT. For this reason, radiation noise generated from the gate driving cable 56 by the flow of the noise current can be reduced. |
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Bibliography: | Application Number: JP20100113836 |