SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To reduce a voltage drop loss and efficiently apply heat to a phase change material by directly connecting a phase change material area to a second source/drain electrode of a MOS transistor without going through a contact plug, enabling a reduction in power consumption.SOLUTIO...

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Bibliographic Details
Main Author KAKEGAWA TOMOYASU
Format Patent
LanguageEnglish
Published 01.12.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To reduce a voltage drop loss and efficiently apply heat to a phase change material by directly connecting a phase change material area to a second source/drain electrode of a MOS transistor without going through a contact plug, enabling a reduction in power consumption.SOLUTION: A semiconductor device comprises: a MOS transistor having a first source/drain electrode and a second source/drain electrode; a GND wire connected to the first source/drain electrode through a contact plug; a phase change material area; and an upper electrode on the phase change material area. The phase change material area is directly connected to the second source/drain electrode.
Bibliography:Application Number: JP20100114263