PLASMA PROCESSING APPARATUS EMPLOYING DENSE SLOT TRANSMISSIVE ELECTRODE BODY

• Main Authors: USUI TAKETO, NEGISHI NOBUYUKI, KAMIBAYASHI MASAMI, SUZUKI KEIZO, TAKEI TAKESHI
• Format: Patent
• Language: English
• Published: 10.11.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To solve the problem that it is difficult to accomplish highly controllable and reliable plasma processing apparatus (plasma etching apparatus or plasma surface processing apparatus) because of temporal and spatial variation in plasma distribution, plasma potential, etching property or surface processing property.SOLUTION: At least a part of an electromagnetic wave for discharge formation is introduced through a transmissive electrode body to a processing chamber. The transmissive electrode body has a transmissive electrode layer at least as a part of components and in the transmissive electrode layer, an elongated slot opening area is formed densely. The transmissive electrode body behaves like a material having electrical conductivity for an RF bias electromagnetic wave or ion plasma vibration electromagnetic wave, thereby achieving high stability and high reliability in plasma property and plasma processing property.