NONVOLATILE MEMORY AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a nonvolatile memory in which setting operation and resetting operation can be ensured in bipolar driving, and to provide a manufacturing method of the same.SOLUTION: The nonvolatile memory comprises: a word line WL as a first electrode; a bit line BL as a second ele...

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Bibliographic Details
Main Authors YABUKI SO, HIROTA JUN, IWAKAJI YOKO
Format Patent
LanguageEnglish
Published 04.11.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a nonvolatile memory in which setting operation and resetting operation can be ensured in bipolar driving, and to provide a manufacturing method of the same.SOLUTION: The nonvolatile memory comprises: a word line WL as a first electrode; a bit line BL as a second electrode; a resistance change portion 25 which is provided between the word line WL and the bit line BL and transits between a first resistance state and a second resistance state; and a selection element 22 which is provided between the resistance change portion 25 and the word line WL, comprises a p layer 22p including a p-type semiconductor, an i-layer 22i including an intrinsic semiconductor, and an n layer 22n including n-type semiconductor, and comprises an impurity 220 which has smaller band gap energy than that of the intrinsic semiconductor and in which the concentration peak of the i layer 22i is at the center of the layer thickness of the i layer 22i.
Bibliography:Application Number: JP20100137167