SEMICONDUCTOR PHOTODETECTOR

PROBLEM TO BE SOLVED: To provide a semiconductor photodetector using a silicon substrate and having a practically sufficient sensitivity characteristic in a wavelength band including near-infrared.SOLUTION: A semiconductor photodetector 1A includes a silicon substrate 2, having a semiconductor layer...

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Bibliographic Details
Main Authors SAKAMOTO AKIRA, MASE MITSUTO, YAMAZAKI TOMOHIRO, SUZUKI TAKASHI, FUJII YOSHIMARO
Format Patent
LanguageEnglish
Published 04.11.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor photodetector using a silicon substrate and having a practically sufficient sensitivity characteristic in a wavelength band including near-infrared.SOLUTION: A semiconductor photodetector 1A includes a silicon substrate 2, having a semiconductor layer 20 and an epitaxial semiconductor layer 21 which grows on the semiconductor layer 20 and has impurity concentration lower than the semiconductor layer 20, and conductors (a photo-gate electrode PG, a first and a second gate electrodes TX1 and TX2, contact electrodes 11 and pad electrodes 13) arranged on a surface of the epitaxial semiconductor layer 21. A photosensitive region (a region just below the photo-gate electrode PG) is formed in the epitaxial semiconductor layer 21. Uneven irregularities 22 are formed on a surface 2BK confronted with at least the photosensitive region in the semiconductor layer 20. The uneven irregularities 22 are optically exposed.
Bibliography:Application Number: JP20100093180