SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a manufacturing method and a structure increasing the current density of a heater unit by reducing the number of steps, in a semiconductor device with a phase-change memory storing information by heating a phase-change material layer by a heater electrode to change a...

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Bibliographic Details
Main Authors ASANO ISAMU, HYUGANO NAOYA
Format Patent
LanguageEnglish
Published 27.10.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a manufacturing method and a structure increasing the current density of a heater unit by reducing the number of steps, in a semiconductor device with a phase-change memory storing information by heating a phase-change material layer by a heater electrode to change a resistance value.SOLUTION: An opening which is the same in shape as an upper surface of the heater electrode 10 and through which the entire surface is exposed is formed in an interlayer insulating film 13 covering the heater electrode 10, a side wall 15 made of an insulating material is formed in the opening, the phase-change material layer 16 is in contact with the heater electrode 10 in the opening with the side wall 10 formed, and a phase-change region 18 in the phase-change material layer 16 is formed in the opening surrounded by the side wall 10.
Bibliography:Application Number: JP20100085140