PHYSICAL VAPOR-DEPOSITION APPARATUS AND PHYSICAL VAPOR-DEPOSITION METHOD

• Main Authors: YUMOTO ATSUSHI, HIROKI FUJIO, NIWA NAOKI
• Format: Patent
• Language: English
• Published: 27.10.2011
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a physical vapor-deposition apparatus which can use a high melting-point metal such as tungsten as an evaporation source, and to provide a method of using the same.SOLUTION: This physical vapor-deposition apparatus includes: a vaporization chamber 10 which has an evaporation source 15 provided in its inner part, has a heating section for irradiating the evaporation source with a laser beam emitted from a laser source 16a to heat the evaporation source, heats the evaporation source by the heating section in a predetermined gas atmosphere or in the atmosphere to evaporate the evaporation source, and produces fine particles from evaporated atoms; and a film-forming chamber 30 which has a nozzle 35 connected to a transfer tube 18 that is a path for transporting the gas containing the fine particles from the vaporization chamber, and a substrate 33 to be film-formed, in its inner part, jets the fine particles that have been transported from the vaporization chamber and are contained in a gas stream J, from the nozzle toward the substrate to physically vapor-deposit the fine particles onto the substrate.