DIFFERENTIAL AMPLIFICATION SENSE AMPLIFIER CIRCUIT AND METHOD FOR DRIVING THE SAME, AND SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR EVALUATING THE SAME

PROBLEM TO BE SOLVED: To provide a differential amplification sense amplifier circuit for detecting a defective characteristic margin of a memory cell due to a crystal defect etc. without an increase in the area of a memory cell region in a test of an SRAM.SOLUTION: In the differential amplification...

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Bibliographic Details
Main Authors SAKAGAMI MASAHIKO, AWAMURA SATOSHI
Format Patent
LanguageEnglish
Published 13.10.2011
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide a differential amplification sense amplifier circuit for detecting a defective characteristic margin of a memory cell due to a crystal defect etc. without an increase in the area of a memory cell region in a test of an SRAM.SOLUTION: In the differential amplification sense amplifier circuit, a PMOSFET 301 and an NMOSFET 303, and a PMOSFET 302 and an NMOSFET 304, are connected in a complementary manner. The PMOSFET 301 is connected via a control PMOSFET 305 to a power supply voltage, and the PMOSFET 303 is connected via a control PMOSFET 307 to the power supply voltage. The NMOSFET 302 is connected via a control NMOSFET 306 to a ground voltage, and the NMOSFET 304 is connected via a control NMOSFET 308 to the ground voltage.
Bibliography:Application Number: JP20100073314