SEMICONDUCTOR DEVICE

• Main Authors: FURUKAWA AKIHIKO, HONDA NARUTO, KAWAKAMI TAKASHI, NARASAKI ATSUSHI, FUJII RYOICHI
• Format: Patent
• Language: English
• Published: 06.10.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high breakdown voltage.SOLUTION: The semiconductor device includes a drift layer 1, a base 2 of a second conductivity type selectively formed on a surface of the drift layer 1 as an active region of the semiconductor device, a RESURF layers 3, 12 of second conductivity types which are selectively formed on a surface of the drift layer 1 to be adjacent to the base 2 and have impurity concentrations lower than that of a base 2, RESURF layers 4, 13 of second conductivity types selectively formed on the surface of the drift layer 1 to be adjacent to the RESURF layers 3, 12 and having impurity concentrations lower than that of the base 2, a field plate 9 connected to the base 2 and formed on the drift layer 1 at an interface between the base 2 and the RESURF layers 3, 12, and an FFP 11 which is spaced from the field plate 9 in a plane and formed above the drift layer 1 at an interface between the RESURF layers 3, 12 and the RESURF layers 4, 13 with an insulating layer 8 disposed therebetween.