SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high breakdown voltage.SOLUTION: The semiconductor device includes a drift layer 1, a base 2 of a second conductivity type selectively formed on a surface of the drift layer 1 as an active region of the semiconductor device, a RESUR...

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Main Authors FURUKAWA AKIHIKO, HONDA NARUTO, KAWAKAMI TAKASHI, NARASAKI ATSUSHI, FUJII RYOICHI
Format Patent
LanguageEnglish
Published 06.10.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high breakdown voltage.SOLUTION: The semiconductor device includes a drift layer 1, a base 2 of a second conductivity type selectively formed on a surface of the drift layer 1 as an active region of the semiconductor device, a RESURF layers 3, 12 of second conductivity types which are selectively formed on a surface of the drift layer 1 to be adjacent to the base 2 and have impurity concentrations lower than that of a base 2, RESURF layers 4, 13 of second conductivity types selectively formed on the surface of the drift layer 1 to be adjacent to the RESURF layers 3, 12 and having impurity concentrations lower than that of the base 2, a field plate 9 connected to the base 2 and formed on the drift layer 1 at an interface between the base 2 and the RESURF layers 3, 12, and an FFP 11 which is spaced from the field plate 9 in a plane and formed above the drift layer 1 at an interface between the RESURF layers 3, 12 and the RESURF layers 4, 13 with an insulating layer 8 disposed therebetween.
Bibliography:Application Number: JP20100067358