RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

• Main Authors: FUJII KANA, TARUYA SHINJI, IWATO KAORU, ENOMOTO YUICHIRO, KATO KEITA, DOBASHI TORU, KAMIMURA SATOSHI, MIZUTANI KAZUYOSHI, KATAOKA SHOHEI
• Format: Patent
• Language: English
• Published: 06.10.2011
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

PROBLEM TO BE SOLVED: To provide: a resist composition having excellent development failure performance; and a pattern forming method using the composition.SOLUTION: The resin composition contains: a resin which contains a repeating unit including a group that dissolves by action of acid to generate an alcoholic hydroxy group and decreases the solubility to a developing solution containing an organic solvent by the action of acid; and a compound that generates acid expressed by the following general formula (I) by application of activated light rays or radiation rays, wherein Xf represents each independently, a fluorine atom or an alkyl group substituted with at least one fluorine atom, Rand Rrepresent each independently, a group selected from the group consisting of a hydrogen atom, a fluorine atom, an alkyl group, and an alkyl group substituted with at least one fluorine atom, L represents each independently a single bond or divalent linking group, A represents each independently a group having a cyclic structure, x represents each independently an integer of 1 to 20, y represents each independently an integer of 0 to 10, and z represents each independently an integer of 0 to 10.