TEMPERATURE SENSOR AND MANUFACTURING METHOD OF TEMPERATURE SENSOR

• Main Authors: IWAKI TAKAO, TAKEUCHI YUKIHIRO, WADO HIROYUKI
• Format: Patent
• Language: English
• Published: 29.09.2011
• Subjects: COLORIMETRY; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT; MEASURING; MEASURING QUANTITY OF HEAT; MEASURING TEMPERATURE; PHYSICS; RADIATION PYROMETRY; TESTING; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR

PROBLEM TO BE SOLVED: To provide a temperature sensor containing a quantum well structure capable of improving sensitivity while controlling the generation of crystal defect, and to provide a method of manufacturing the temperature sensor. SOLUTION: The temperature sensor includes a SiGe layer 31, and a QW structure part 50 being formed on the SiGe layer 31 and consisting of a plurality of semiconductor layers (SiGe layer) which are composed of the same elements as the SiGe layer 31. The QW structure part 50 changes resistance value depending on the temperature change. The plurality of the semiconductor layers composing the QW structure part 50 composes a barrier layer 50a, a barrier layer 50c and a well layer 50b, which is placed in between the barrier layer 50a and the barrier layer 50c. The SiGe layer 31, the barrier layer 50a, the barrier layer 50c, and the well layer 50c are formed so as to satisfy b<a<c, when the lattice constant of the SiGe layer 31 is a, the lattice constant of the barrier layer 50a and the barrier layer 50c is b and the lattice constant of the well layer 50b is c. COPYRIGHT: (C)2011,JPO&INPIT