SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: EDA KENTARO, FUJITA KEIJI, SAKANAKA TOSHINORI
• Format: Patent
• Language: English
• Published: 15.09.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device that has stress liner films formed so as to improve performances of transistors differing in breakdown voltage even when the transistors are embedded on the same semiconductor substrate, and to provide a method of manufacturing the semiconductor device. SOLUTION: The stress liner films 11 and 12 formed on the low-breakdown-voltage transistor and high-breakdown-voltage transistor embedded on the semiconductor substrate 1 can be made different in film quality from each other. Here, the stress liner film 11 has its film quality set so that the performance of the low-breakdown-voltage transistor is effectively improved and the performance of the high-breakdown-voltage transistor is not improved so much. Alternatively, the stress liner film 11 has its film quality set so that the performance of the high-breakdown-voltage transistor is effectively improved and the performance of the low-breakdown-voltage transistor is not improved so much. COPYRIGHT: (C)2011,JPO&INPIT