OLIGOMETHYL ARSINE COMPOUND FOR AMORPHOUS SEMICONDUCTOR FILM, AND FILM FORMING GAS USING THE SAME

PROBLEM TO BE SOLVED: To provide a compound which is chemically safe and easy to be transported in large quantities as a compound used for a pin-junction amorphous semiconductor film formed as a photoelectric conversion layer of a photovoltaic device. SOLUTION: An oligomethyl arsine compound is used...

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Bibliographic Details
Main Authors TANAKA KENJI, IRIE TATSUYA, IDE TOSHIHISA
Format Patent
LanguageEnglish
Published 15.09.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a compound which is chemically safe and easy to be transported in large quantities as a compound used for a pin-junction amorphous semiconductor film formed as a photoelectric conversion layer of a photovoltaic device. SOLUTION: An oligomethyl arsine compound is used for the pin-junction amorphous semiconductor film formed as the photoelectric conversion layer of the photovoltaic device, and is represented by general formula (1) (CH3)nAsH3-n[wherein (n) represents an integer of 1 to 3]. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20100044041