SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor laser element such that its manufacture efficiency is improved more, and an FFP has an excellent Gaussian shape with a small ripple. SOLUTION: The semiconductor laser element has: a substrate 2; a semiconductor layer 4 formed on the substrate; a waveg...

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Bibliographic Details
Main Authors KAWADA YASUHIRO, TANISAKA SHINGO
Format Patent
LanguageEnglish
Published 15.09.2011
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor laser element such that its manufacture efficiency is improved more, and an FFP has an excellent Gaussian shape with a small ripple. SOLUTION: The semiconductor laser element has: a substrate 2; a semiconductor layer 4 formed on the substrate; a waveguide region formed in the semiconductor layer 4; and an end surface formed on a light projection-side end of the waveguide region. The end surface has: a projection part 8 protruding at least to one side and including a resonator end surface 6; and second end surfaces 7 behind the resonator end surface 6, and also has: step parts 12 formed of semiconductor layers on side surfaces 10 of the projection part 8; and awall part 5 apart from the end surfaces in front of second end surfaces 7. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20100042693