METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR SINGLE CRYSTAL

• Main Authors: DOMOTO CHIAKI, UENO CHIAKI
• Format: Patent
• Language: English
• Published: 08.09.2011
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DEVICES USING STIMULATED EMISSION; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor single crystal which is in a bulk state and has high crystallinity by reducing a recessed portion that is caused during the growth. SOLUTION: The method for producing a nitride semiconductor single crystal by a vapor phase growing method includes steps of: growing a first nitride semiconductor single crystal portion 2 on a seed substrate 1, the single crystal portion 2 having a major face and a recessed portion on the backside of an interface with the seed substrate 1; disposing a mask 4 in the recessed portion; and growing a second nitride semiconductor crystal portion on the first nitride semiconductor portion 2 so as to cover the mask 4. COPYRIGHT: (C)2011,JPO&INPIT