METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, wherein the manufacturing cost is reduced when an enhancement FET and a depletion FET are integrated on a semiconductor substrate. SOLUTION: The method of manufacturing the semiconductor device includes steps of: form...

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Bibliographic Details
Main Author SHIBATA MAYUMI
Format Patent
LanguageEnglish
Published 01.09.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, wherein the manufacturing cost is reduced when an enhancement FET and a depletion FET are integrated on a semiconductor substrate. SOLUTION: The method of manufacturing the semiconductor device includes steps of: forming openings 32 and 33 in a gate electrode 12 in a predetermined formation region 12Da of the depletion field-effect transistor; and forming impurity diffusion regions on both sides of the gate electrode 12 respectively while forming an impurity diffusion region continuously distributed from one of both sides of the gate electrode 12 to the other below the openings 32 and 33 by obliquely ion-implanting an impurity in an active region 21 using the gate electrode 12 as a mask. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20100035402