SOLID-STATE IMAGE SENSOR, METHOD OF MANUFACTURING THE SAME, AND IMAGING DEVICE

PROBLEM TO BE SOLVED: To prevent color mixture into adjacent pixels by providing a reflective film coating a readout gate electrode so as to improve sensitivity. SOLUTION: A solid-state image sensor 1 includes a plurality of unit pixels arranged including an active element for converting a signal ch...

Full description

Saved in:
Bibliographic Details
Main Author NATORI TAICHI
Format Patent
LanguageEnglish
Published 04.08.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To prevent color mixture into adjacent pixels by providing a reflective film coating a readout gate electrode so as to improve sensitivity. SOLUTION: A solid-state image sensor 1 includes a plurality of unit pixels arranged including an active element for converting a signal charge photoelectrically converted by a photoelectric conversion element 111 into an electric signal for output, includes a wiring layer 130 serving as a wire 131 for the active element provided on one of surfaces of an element layer 110 where the photoelectric conversion element 111 is formed, and causes incident light L to enter the photoelectric conversion element 111 through a color filter 150 formed on the other surface of the element layer 110. The reflective film 140 formed to cover an entire pixel surface containing the readout gate electrode 121 for reading the photoelectrically converted signal charge of the active element is provided on a side of the wiring layer 130 of the element layer 110 via an insulation film 141. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20110097454