SEMICONDUCTOR RECTIFIER

• Main Authors: MIZUKAMI MAKOTO, NISHIO JOJI, SHINOHE TAKASHI
• Format: Patent
• Language: English
• Published: 04.08.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a high voltage semiconductor rectifier which reduces a voltage at which a minority carrier is injected and which uses a wide bandgap semiconductor having a sufficient surge current resistance. SOLUTION: The semiconductor rectifier is equipped with: a first conductivity type wide bandgap semiconductor substrate; a first conductivity type wide bandgap semiconductor layer which is formed on the upper surface of the wide bandgap semiconductor substrate such that its impurity density is 1E+14 atoms/cm3or more and 5E+16 atoms/cm3or less, and its thickness is 20 μm or more; a first conductivity type first wide bandgap semiconductor region formed on the surface of the wide bandgap semiconductor layer; a second conductivity type second wide bandgap semiconductor region sandwiched by the first wide bandgap semiconductor region; a first electrode formed on the first and second wide bandgap semiconductor regions; and a second electrode formed on the lower surface of the wide bandgap semiconductor substrate. In the semiconductor rectifier, the width of the second wide bandgap semiconductor region is 15 μm or more. COPYRIGHT: (C)2011,JPO&INPIT