PHOTONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide particularly a photonic device, along with a method of manufacturing the photonic device, concerning a semiconductor diode made of a compound semiconductor on a silicon wafer or made of another lattice mismatched conductor, and a method of forming the semiconductor d...

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Bibliographic Details
Main Author LOCHTEFELD ANTHONY J
Format Patent
LanguageEnglish
Published 21.07.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide particularly a photonic device, along with a method of manufacturing the photonic device, concerning a semiconductor diode made of a compound semiconductor on a silicon wafer or made of another lattice mismatched conductor, and a method of forming the semiconductor diode. SOLUTION: The photonic device includes a substrate; a dielectric material including two or more openings that expose part of the substrate, the openings each having an aspect ratio of at least 1; a lower diode material including a compound semiconductor material that is lattice mismatched to the substrate, occupies two or more openings and is coalesced above the two or more openings to form a lower diode region; an upper diode material; and an active diode region provided between the upper and lower diode materials. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20100156436