METHOD FOR PRODUCING NITRIDE CRYSTALS, PRODUCTION VESSEL AND MEMBERS

• Main Authors: KIYOMI MAKIKO, MIKAWA YUTAKA, KAGAMITANI YUJI, ISHIGURO TORU, YAMAMURA YOSHIHIKO
• Format: Patent
• Language: English
• Published: 07.07.2011
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for producing nitride crystals with which it is possible to inhibit precipitation of nitride crystals in parts other than on seed crystals and improve the efficiency of producing gallium nitride single crystals grown on seed crystals. SOLUTION: When nitride crystals are produced by the ammonothermal method in a vessel 1 holding a solution containing a mineralizer, the portions of the surfaces of the vessel 1 and the members 5 and 6 inside the vessel in contact with the solution are at least partially formed from a metal or alloy including one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and the surface roughness (Ra) is less than 1.80 μm. COPYRIGHT: (C)2011,JPO&INPIT