METHOD OF MANUFACTURING REFLECTIVE TYPE MASK

• Main Authors: ABE TSUKASA, TAKIGAWA TADAHIKO, INAZUKI YUICHI
• Format: Patent
• Language: English
• Published: 30.06.2011
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method of manufacturing a reflective type mask, capable of manufacturing the mask by accurately correcting a fine pattern without lowering throughput, without damaging a normal pattern and a reflection layer and without leaving a correction mark, concerning the manufacture of the reflective type mask for EUV exposure. SOLUTION: The method of manufacturing the reflective type mask includes a process of preparing a reflective type mask blank provided with a hard mask layer, forming a hard mask pattern by etching the hard mask layer, forming an absorbing layer pattern by etching an absorbing layer with the hard mask pattern as a mask, and etching the hard mask pattern and a buffer layer. After forming the hard mask pattern, the absorbing layer is etched twice separately, washing is performed after etching the absorbing layer for the first time, and then the absorbing layer pattern is formed by etching the absorbing layer for the second time. COPYRIGHT: (C)2011,JPO&INPIT