SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a nonvolatile memory having an excellent data holding property and a technique for manufacturing the memory. SOLUTION: A polycrystalline silicon film 7 and an insulating film 8 are sequentially stacked on a gate insulating film 6, then the polycrystalline silicon fil...

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Bibliographic Details
Main Author SHIBA KAZUYOSHI
Format Patent
LanguageEnglish
Published 23.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a nonvolatile memory having an excellent data holding property and a technique for manufacturing the memory. SOLUTION: A polycrystalline silicon film 7 and an insulating film 8 are sequentially stacked on a gate insulating film 6, then the polycrystalline silicon film 7 and the insulating film 8 are patterned to form gate electrodes 7A, 7B, and then sidewall spacers 12 including a silicon oxide film are formed on sidewalls of the gate electrodes 7A, 7B. After that, a silicon nitride film 19 is deposited on a substrate 1 by a plasma CVD process so that the gate electrodes 7A, 7B are not in direct contact with the silicon nitride film 19. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20110020290