SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

• Main Author: SHIBATA MAYUMI
• Format: Patent
• Language: English
• Published: 23.06.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device achieved in the reduction of the number of manufacturing processes when an enhancement-type FET and a depression-type FET are integrated. SOLUTION: The manufacturing method includes a process of forming a gate electrode 10B traversing an active region 11 and shorter than a gate electrode 10A, and a diagonal ion injection process of diagonally injecting an ion impurity into the active region 11 by using the gate electrodes 10A and 10B as masks to form impurity diffusion regions 20a and 20b not continuous with each other in both side regions of the gate electrode 10A in a gate length direction and to form continuous impurity diffusion regions 20g and 20h extending from one side region of the gate electrode 10B to the other side region of the same in the gate length direction. COPYRIGHT: (C)2011,JPO&INPIT