FERROELECTRIC MEMORY, AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a ferroelectric memory that achieves low-temperature heat treatment in a manufacturing process while preventing degradation of memory characteristics due to shortage of heat treatment of baking densification to crystallize a ferroelectric film, especially degradation...

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Bibliographic Details
Main Author TATSUNARI TOSHITAKA
Format Patent
LanguageEnglish
Published 02.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a ferroelectric memory that achieves low-temperature heat treatment in a manufacturing process while preventing degradation of memory characteristics due to shortage of heat treatment of baking densification to crystallize a ferroelectric film, especially degradation of residual polarization characteristics of the ferroelectric film. SOLUTION: The ferroelectric memory includes a ferroelectric capacitor on which a lower electrode 10, capacitance insulation film 12 composed of the ferroelectric film with a perovskite-type crystal structure, and an upper electrode 13 are formed to be laminated in this order on a p-type semiconductor substrate 1. Furthermore, the memory includes a convex lens 14 that is formed on the upper electrode 13 to selectively heat the ferroelectric film by concentrating light. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20090262029