METHOD FOR FORMING ZIRCONIA FILM

PROBLEM TO BE SOLVED: To provide a method for forming a zirconia film wherein good film quality can be achieved by an aerosolized gas deposition method. SOLUTION: In the method for forming the zirconia film by the aerosolized gas deposition method, zirconia fine particles P having an average particl...

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Bibliographic Details
Main Author FUCHIDA HIDETSUGU
Format Patent
LanguageEnglish
Published 26.05.2011
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Summary:PROBLEM TO BE SOLVED: To provide a method for forming a zirconia film wherein good film quality can be achieved by an aerosolized gas deposition method. SOLUTION: In the method for forming the zirconia film by the aerosolized gas deposition method, zirconia fine particles P having an average particle diameter of ≥2 μm and ≤4 μm and a specific surface area of ≥4 m2/g and ≤7 m2/g are contained in a hermetically sealed container 2; an aerosol A of the zirconia fine particles P is formed by introducing a gas into the hermetically sealed container 2; and the aerosol A is conveyed into a film formation chamber 3, which is maintained at a pressure lower than that of the hermetically sealed container 2 through a conveying pipe 6 that is connected to the hermetically sealed container 2, so that the zirconia fine particles P are deposited on a substrate S that is contained in the film formation chamber 3. By using zirconia fine particles satisfying the above-described conditions, a dense zirconia thin film having high adhesion to the substrate can be formed. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20100009016