SILICON CRYSTALLIZATION SYSTEM AND SILICON CRYSTALLIZATION METHOD USING LASER

PROBLEM TO BE SOLVED: To provide a silicon crystallization system and a silicon crystallization method that can improve polycrystalline silicon and display quality of a display device using the same by improving energy unevenness along a longer-axis direction of a linear laser beam when silicon is c...

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Bibliographic Details
Main Authors RYU JE-KIL, LEE SANGJO, LEE HONG-RO, KWON OH-SEOB
Format Patent
LanguageEnglish
Published 06.05.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a silicon crystallization system and a silicon crystallization method that can improve polycrystalline silicon and display quality of a display device using the same by improving energy unevenness along a longer-axis direction of a linear laser beam when silicon is crystallized by making a shot of the linear laser beam. SOLUTION: The present invention relates to the silicon crystallization system and silicon crystallization method using a laser. The silicon crystallization system includes a vibration device for vibrating the linear laser beam along the longer-axis direction of the linear laser beam, and a vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20100091541