METHOD FOR FORMING ZIRCONIA FILM
PROBLEM TO BE SOLVED: To provide a method for forming a zirconia film wherein good film quality can be achieved by an aerosolized gas deposition method. SOLUTION: Specifically disclosed is a method for forming a yttria-containing stabilized zirconia film by an aerosolized gas deposition method, wher...
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Main Author | |
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Format | Patent |
Language | English |
Published |
28.04.2011
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a method for forming a zirconia film wherein good film quality can be achieved by an aerosolized gas deposition method. SOLUTION: Specifically disclosed is a method for forming a yttria-containing stabilized zirconia film by an aerosolized gas deposition method, wherein zirconia fine particles P having an average particle diameter of not less than 1 μm but not more than 5 μm and a specific surface area of not less than 1 m2/g but not more than 4 m2/g are contained in a hermetically sealed container 2; an aerosol A of the zirconia fine particles P is formed by introducing a gas into the hermetically sealed container 2; an aerosol A of the zirconia fine particles P is conveyed into a film formation chamber 3, where is maintained at a pressure lower than that of the hermetically sealed container 2, through a conveying pipe 6 that is connected to the hermetically sealed container 2, so that the zirconia fine particles P are deposited on a substrate S that is contained in the film formation chamber 3. By using zirconia fine particles satisfying the above-described conditions, a dense zirconia thin film having high adhesion to a substrate can be formed. COPYRIGHT: (C)2011,JPO&INPIT |
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Bibliography: | Application Number: JP20090239654 |