SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor storage device improving an operational reliability, and also to provide a method for manufacturing the semiconductor storage device. SOLUTION: The semiconductor storage device includes: a first insulating film 16 formed on an active region AA; a plur...

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Bibliographic Details
Main Author SAWAMURA KENJI
Format Patent
LanguageEnglish
Published 07.04.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor storage device improving an operational reliability, and also to provide a method for manufacturing the semiconductor storage device. SOLUTION: The semiconductor storage device includes: a first insulating film 16 formed on an active region AA; a plurality of charge storages 17 in microcrystallites arranged on the first insulating film 16; a second insulating film 18 formed on the first insulating film 16 so as to coat the charge storages 17; and a control gate 19 formed on the second insulating film 18. A density of the charge storages 17 at an end in the gate-width direction of the first insulating film 16 is larger than that at a center in the gate-width direction. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20090219737