INFORMATION STORAGE DEVICE INCLUDING VERTICAL NANO WIRE

PROBLEM TO BE SOLVED: To provide a relatively high-integration and high-capacity information storage device having a memory cell region achieved by using a vertical nano wire structure. SOLUTION: A memory cell includes: a memory cell array part having a substrate, a plurality of nano wires arranged...

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Bibliographic Details
Main Authors SEO SUN-AE, LEE SUNGUL, SHIN JAI-KWANG, KIM HO-JUNG
Format Patent
LanguageEnglish
Published 31.03.2011
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide a relatively high-integration and high-capacity information storage device having a memory cell region achieved by using a vertical nano wire structure. SOLUTION: A memory cell includes: a memory cell array part having a substrate, a plurality of nano wires arranged vertically on the substrate, wherein each of the plurality of nano wires includes a plurality of domains for storing information; a nano wire selection part formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control part 14 formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control part 15 formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20100173636