METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

• Main Authors: NAGAI YOICHI, ISHIZUKA TAKASHI, AKITA KATSUSHI, FUJII KEI
• Format: Patent
• Language: English
• Published: 24.03.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element which is constituted of a group III-V semiconductor and has reduced dark current. SOLUTION: The method includes a step of forming a first semiconductor layer 2a consisting of a group III-V semiconductor, containing an Sb element on a substrate 3a consisting of a group III-V semiconductor, and a step of forming a second semiconductor layer 10a consisting of a group III-V semiconductor on the first semiconductor layer 2a after forming the first semiconductor layer 2a. The step of forming the first semiconductor layer 2a is such that a first layer included in the first semiconductor layer 2a and having a predetermined thickness from an interface with the substrate 3a is formed at a first temperature; and then a second layer excluding the first layer in the first semiconductor layer 2a is formed at a second temperature higher than the first temperature, and the step of forming the second semiconductor layer 10a is such that a third layer included in the second semiconductor layer 10a and having a predetermined thickness from an interface with the first semiconductor layer 2a is formed at the second temperature. COPYRIGHT: (C)2011,JPO&INPIT